4v drive pch mosfet RSQ015P10 ? structure ? dimensions (unit : mm) silicon p-channel mosfet ? features 1) low on-resistance. 2) low voltage drive(4v). 3) small surface mount package (tsmt6). ? application switching ? packaging specifications ? inner circuit package taping code tr basic ordering unit (pieces) 3000 RSQ015P10 ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss ? 100 v gate-source voltage v gss ? 20 v continuous i d ? 1.5 a pulsed i dp ? 6.0 a continuous i s ? 1.0 a pulsed i sp ? 6.0 a power dissipation p d 1.25 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 100 ? c / w *mounted on a ceramic board. parameter type source current (body diode) drain current parameter *2 *1 *1 * tsmt6 (1) drain (2) drain (3) gate (4) source (5) drain (6) drain ? 1 esd protection diode ? 2 body diode abbreviated symbol : zn ?1 (4) (1) (2) ?2 (6) (5) (3) 1/6 2011.08 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RSQ015P10 ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss ? 100 - - v i d = ? 1ma, v gs =0v zero gate voltage drain current i dss -- ? 1 ? av ds = ? 100v, v gs =0v gate threshold voltage v gs (th) ? 1.0 - ? 2.5 v v ds = ? 10v, i d = ? 1ma - 350 470 i d = ? 1.5a, v gs = ? 10v - 380 510 i d = ? 0.75a, v gs = ? 4.5v - 400 540 i d = ? 0.75a, v gs = ? 4.0v forward transfer admittance l y fs l 1.5 - - s v ds = ? 10v, i d = ? 1.5a input capacitance c iss - 950 - pf v ds = ? 25v output capacitance c oss - 45 - pf v gs =0v reverse transfer capacitance c rss - 20 - pf f=1mhz turn-on delay time t d(on) - 10 - ns v dd ? 50v, i d = ? 0.75a rise time t r - 15 - ns v gs = ? 10v turn-off delay time t d(off) - 60 - ns r l =66 ? fall time t f - 10 - ns r g =10 ? total gate charge q g - 17.0 - nc v dd ? 50v, i d = ? 1.5a gate-source charge q gs - 4.5 - nc v gs = ? 5v gate-drain charge q gd - 5.0 - nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd -- ? 1.2 v v gs =0v, i s = ? 1.5a *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * * 2/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSQ015P10 ? electrical characteristic curves (ta=25 ? c) 0 0.5 1 1.5 0 0.2 0.4 0.6 0.8 1 drain current : - i d [a] drain - source voltage : - v ds [v] fig.1 typical output characteristics ( ) v gs = - 2.5v v gs = - 10.0v v gs = - 4.0v v gs = - 4.5v v gs = - 2.8v t a =25 pulsed 0 0.5 1 1.5 0 2 4 6 8 10 drain current : - i d [a] drain - source voltage : - v ds [v] fig.2 typical output characteristics ( ) v gs = - 2.5v v gs = - 10.0v v gs = - 2.8v v gs = - 4.5v v gs = - 4.0v t a =25 pulsed 100 1000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.3 static drain - source on - state resistance vs. drain current v gs = - 4.0v v gs = - 4.5v v gs = - 10v t a =25 pulsed 10 100 1000 10000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.4 static drain - source on - state resistance vs. drain current v gs = - 10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 10 100 1000 10000 0.01 0.1 1 10 static drain - source on - state resistance r ds(on) [m ] drain current : - i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs = - 4.5v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 10 100 1000 10000 0.01 0.1 1 10 static drain - source on - state resistance r ds (on) [m ] drain current : - i d [a] fig.6 static drain - source on - state resistance vs. drain current v gs = - 4v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 3/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSQ015P10 0.01 0.1 1 10 0.001 0.01 0.1 1 10 forward transfer admittance y fs [s] drain current : - i d [a] fig.7 forward transfer admittance vs. drain current v ds = - 10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0.001 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 drain currnt : - i d [a] gate - source voltage : - v gs [v] fig.8 typical transfer characteristics v ds = - 10v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 0.01 0.1 1 10 0.0 0.5 1.0 1.5 2.0 source current : - i s [a] source - drain voltage : - v sd [v] fig.9 source current vs. source - drain voltage v gs =0v pulsed t a = 125 t a = 75 c t a = 25 c t a = - 25 c 100 200 300 400 500 600 700 800 0 2 4 6 8 10 static drain - source on - state resistance r ds(on) [m ] gate - source voltage : - v gs [v] fig.10 static drain - source on - state resistance vs. gate - source voltage i d = - 1.5a i d = - 0.75a t a =25 pulsed 1 10 100 1000 10000 0.01 0.1 1 10 switching time : t [ns] drain current : - i d [a] fig.11 switching characteristics t d(on) t r t d(off) t f v dd P - 50v v gs = - 10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 5 10 15 20 25 30 35 gate - source voltage : - v gs [v] total gate charge : - q g [nc] fig.12 dynamic input characteristics t a =25 c v dd = - 50v i d = - 1.5a pulsed 4/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSQ015P10 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 capacitance : c [pf] drain - source voltage : - v ds [v] fig.13 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 0.01 0.1 1 10 0.1 1 10 100 1000 drain current : - i d [ a ] drain - source voltage : - v ds [ v ] fig.15 maximum safe operating area t a =25 c single pulse : 1unit mounted on a ceramic board. (30mm 30mm 0.8mm) operation in this area is limited by r ds(on) (v gs = - 10v) p w = 100 s p w = 1ms p w = 10ms dc operation 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) fig.14 normalized transient thermal resistance v.s. pulse width t a =25 c single pulse mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =100 c /w rth (ch - a) (t)=r(t) rth (ch - a) 5/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RSQ015P10 ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90% 10% 10 % 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) f ig.2-1 gate charge measurement circuit v gs i g(const.) v d s d.u.t. i d r l v dd fig.2-2 gate charge waveform v g v gs charge q g q gs q gd 6/6 2011.08 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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